THEORY AND EXPERIMENT OF CAPACITANCE-VOLTAGE PROFILING ON SEMICONDUCTORS WITH QUANTUM-CONFINEMENT

The resolution of the Capacitance-Voltage (C-V) technique on semiconductors with quantum-confinement is shown to be given by the spatial extent of the wave function which represents the electron (hole) system. The classical Debye-length-broadening of the C-V technique is shown to be invalid in the quantum-confinement regime. Capacitance-voltage profiles on δ-doped GaAs exhibit a full-width at half-maximum of 20 and 40Å for p-type and n-type impurities, respectively. The experimental C-V profiles on δ-doped GaAs agree with theory and demonstrate that impurities are spatially localized on the length scale of the lattice constant. © 1990 The Mineral,Metal & Materials Society,Inc.