THE INFLUENCE OF FACET ROUGHNESS ON THE REFLECTIVITIES OF ETCHED-ANGLED FACETS FOR SUPERLUMINESCENT DIODES AND OPTICAL AMPLIFIERS

被引：7

作者：

LIN, CF

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca.

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 02期

关键词：

D O I：

10.1109/68.122337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the characterization of the roughness of angled facets of GaAs/AlGaAs superluminescent diodes (or optical amplifiers) fabricated by chemically assisted ion beam etching and its influence on reflectivities. For the first time, atomic force microscopy (AFM) is used to directly measure the etched-facet roughness. Those etched-angled facets with roughness exhibit reflectivity at least an order of magnitude higher than completely smooth angled facets. A model is proposed to relate the reflectivity to the roughness measured by AFM.

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页码：127 / 129

页数：3

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