SELF-HEATING IN BJT CIRCUIT PARAMETER EXTRACTION

被引：18

作者：

REISCH, M

机构：

[1] SIEMENS AG, Corporate Research and Development, 8 München 83

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 05期

关键词：

D O I：

10.1016/0038-1101(92)90036-C

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the finite thermal resistance between the surface and backside of semiconductor wafers, self-heating effects may influence the results of parameter measurements in temperature-controlled waferprobe stations. This paper discusses the impact on the determination of the Early voltage and the emitter series resistance. Furthermore, a novel method for the extraction of the thermal resistance from the input characteristics of a bipolar transistor is presented.

引用

页码：677 / 679

页数：3

共 7 条

[1]

De Graaff H. C., 1986, Process and device modeling, P413

[2]

GETREU IE, 1978, MODELING BIPOLAR TRA

[3] A 1-MU-M POLYSILICON SELF-ALIGNING BIPOLAR PROCESS FOR LOW-POWER HIGH-SPEED INTEGRATED-CIRCUITS [J].