INDIRECT TRANSITION IN NARROW JUNCTION OF GE-SI ALLOY

被引:3
作者
ANDO, KI
机构
关键词
D O I
10.1143/JPSJ.15.2360
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2360 / 2360
页数:1
相关论文
共 6 条
[1]   INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].
BRAUNSTEIN, R ;
MOORE, AR ;
HERMAN, F .
PHYSICAL REVIEW, 1958, 109 (03) :695-710
[2]  
BROCKHOUSE BN, 1959, PHYS REV LETT, V2, P258
[3]   A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].
ESAKI, L ;
MIYAHARA, Y .
SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&
[4]  
HAYNES JR, 1959, PHYS CHEM SOLIDS, V8, P392
[5]   DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J].
HOLONYAK, N ;
LESK, IA ;
HALL, RN ;
TIEMANN, JJ ;
EHRENREICH, H .
PHYSICAL REVIEW LETTERS, 1959, 3 (04) :167-168
[6]  
MACFARLANE GG, 1959, PHYS CHEM SOLIDS, V8, P388