SURFACE EFFECTS ON CARRIER DYNAMICS - PHOTOCONDUCTIVITY STUDIES ON SI (111)

被引:16
作者
HSU, JWP
BAHR, CC
FELDE, AV
DOWNEY, SW
HIGASHI, GS
CARDILLO, MJ
机构
[1] AT and T Bell Laboratories, Murray Hill, NJ 07974
关键词
D O I
10.1063/1.350597
中图分类号
O59 [应用物理学];
学科分类号
摘要
We correlate photoconductivity with surface characterization in order to probe the influence of different surface properties of Si (111) on electron-hole dynamics. Photoconductivity data show that the carrier recombination is influenced strongly by surface structure and chemistry as well as by trace imperfections which are undetectable by conventional surface characterization techniques. Results on the Si(111):As (1 x 1) surface indicate carrier recombination at this surface is negligible, in contrast to the (7 x 7) reconstructed surface, where surface recombination is fast, with a surface recombination velocity measured to be greater-than-or-equal-to 2 x 10(6) cm/s. We also investigate the effect of sputter induced disorder and compare our finding with results from other techniques. Combining our results and the present understanding of the (7 x 7) electronic structure, we estimate the carrier capture cross section for dangling bonds to be approximately 10(-15) cm2.
引用
收藏
页码:4983 / 4990
页数:8
相关论文
共 26 条