RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON

被引：4

作者：

LALL, C

KULKARNI, SB

GRAHAM, CD

POPE, DP

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING | 1981年 / 47卷 / 03期

关键词：

D O I：

10.1016/0025-5416(81)90052-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：265 / 270

页数：6

共 10 条

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[3]

GRAHAM CD, 1978, ERDAJPL954506781 U P

[4] RECRYSTALLIZATION OF CAST POLYCRYSTALLINE SILICON [J].

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[5] THE DEFORMATION OF SILICON AT HIGH-TEMPERATURES AND STRAIN RATES [J].

KULKARNI, SB ;

LALL, C ;

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GRAHAM, CD .

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[6] STRUCTURE OF DEFORMED SILICON AND IMPLICATIONS FOR LOW-COST SOLAR-CELLS [J].

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[7] GROWTH TEXTURE OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

PRATT, B ;

KULKARNI, S ;

POPE, DP ;

GRAHAM, CD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1760-1762

[8] DEFORMATION AND RECRYSTALLIZATION TEXTURES IN COMPRESSED POLYCRYSTALLINE SILICON [J].

PRATT, B ;

KULKARNI, S ;

POPE, DP ;

GRAHAM, CD ;

NOEL, G .

METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1977, 8 (11) :1799-1804

[9]

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[10]

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