CHEMICAL AND ISOCONCENTRATION DIFFUSION OF ZN IN ALSB

被引：14

作者：

SHOWAN, SR

SHAW, D

机构：

[1] Physics Department, University of Hull

来源：

PHYSICA STATUS SOLIDI | 1969年 / 32卷 / 01期

关键词：

D O I：

10.1002/pssb.19690320112

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The chemical diffusion of Zn in AlSb has been investigated as a function of temperature in the range 650 to 933 °C and as a function of Zn surface concentration. The diffusion coefficient is found to be concentration‐dependent and shows a behaviour similar to that observed in GaAs, GaP, and InP. Isoconcentration diffusion of Zn at 933 °C in AlSb is found to be strongly concentration‐dependent. Quenching of Zn‐diffused samples shows that the substitutional Zn is a single‐level acceptor which is completely ionized at the diffusion temperature. It is concluded that the Longini model provides a satisfactory interpretation of the diffusion processes. Substitutional Zn in AlSb is also found to show retrograde solubility. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：97 / +

页数：1

共 26 条

[1] ELECTRICAL MEASUREMENTS + X-RAY LATTICE PARAMETER MEASUREMENTS OF GAAS DOPED WITH SE TE ZN + CD + STRESS EFFECTS OF THESE ELEMENTS AS DIFFUSANTS IN GAAS [J].