STUDY OF THE ELECTRICAL ADMITTANCE DUE TO ELECTRON-HOLE RECOMBINATION IN N-GAAS AND N-GAP ELECTRODES

被引:15
作者
VANMAEKELBERGH, D
TERHEIDE, RP
KRUIJT, W
机构
来源
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1989年 / 93卷 / 10期
关键词
D O I
10.1002/bbpc.19890931011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:1103 / 1109
页数:7
相关论文
共 18 条
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