COVERAGE DEPENDENCE OF K ADSORPTION ON SI(100)2X1 BY CORE-LEVEL PHOTOEMISSION - STRUCTURE, CHARGE-TRANSFER, AND METALLIZATION

被引:40
作者
RIFFE, DM [1 ]
WERTHEIM, GK [1 ]
ROWE, JE [1 ]
CITRIN, PH [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 07期
关键词
D O I
10.1103/PhysRevB.45.3532
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using core-level photoemission, a coverage-dependent transition in the adsorption of K on Si(100)2 x 1 is observed. Below approximately 0.25 monolayers, a single adsorption is occupied, the asymmetry of the Si-dimer reconstruction is enhanced, and no more than approximately 0.05e is transferred from K to Si. Above this coverage, multiple sites are occupied, the dimer configuration becomes more symmetric, and the K overlayer becomes increasingly metallic. These findings resolve a number of conflicting studies of this system.
引用
收藏
页码:3532 / 3537
页数:6
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