COVERAGE DEPENDENCE OF K ADSORPTION ON SI(100)2X1 BY CORE-LEVEL PHOTOEMISSION - STRUCTURE, CHARGE-TRANSFER, AND METALLIZATION

被引：40

作者：

RIFFE, DM ^{[1
]}

WERTHEIM, GK ^{[1
]}

ROWE, JE ^{[1
]}

CITRIN, PH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3532

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using core-level photoemission, a coverage-dependent transition in the adsorption of K on Si(100)2 x 1 is observed. Below approximately 0.25 monolayers, a single adsorption is occupied, the asymmetry of the Si-dimer reconstruction is enhanced, and no more than approximately 0.05e is transferred from K to Si. Above this coverage, multiple sites are occupied, the dimer configuration becomes more symmetric, and the K overlayer becomes increasingly metallic. These findings resolve a number of conflicting studies of this system.

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页码：3532 / 3537

页数：6

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