SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON

The effects of implantation of O+ ions with an energy of 150 keV and dose of 1.2 x 10(17) cm-2 into (100) n-type silicon at different wafer temperatures have been investigated. After the implantation, the samples were annealed in an Ar flow furnace at 1200-degrees-C for 2 h. The composition and microstructure were determined using SIMS and XTEM methods. It is found that the spatial localization of SiO2 inclusions in the buried layer can be narrowed by increasing the implantation temperature. However, the best spatial localization of the synthesised oxide precipitates occurs when the implantation temperature is sufficiently low that an amorphous buried layer is formed. An explanation for this phenomenon is discussed.