COHERENT VERSUS INCOHERENT RESONANT TUNNELING AND IMPLICATIONS FOR FAST DEVICES

被引：34

作者：

LURYI, S

机构：

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 03期

关键词：

D O I：

10.1016/0749-6036(89)90320-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：375 / 382

页数：8

共 24 条

[1]

ABRAGAM A, 1982, NUCLEAR MAGNETISM OR

[2]

AHARONOV Y, 1988, WORKSHOP NOVEL PHENO

[3] NEGATIVE TRANSCONDUCTANCE VIA GATING OF THE QUANTUM WELL SUBBANDS IN A RESONANT TUNNELING TRANSISTOR [J].

BELTRAM, F ;

CAPASSO, F ;

LURYI, S ;

CHU, SNG ;

CHO, AY ;

SIVCO, DL .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :219-221

[4] INVERTED BASE-COLLECTOR TUNNEL TRANSISTORS [J].

BONNEFOI, AR ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :888-890

[5] COHERENT AND SEQUENTIAL TUNNELING IN SERIES BARRIERS [J].

BUTTIKER, M .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) :63-75

[6]

CAPASSO F, IN PRESS INTEGRATED

[7] A NEW ONE-DIMENSIONAL QUANTUM WELL STRUCTURE [J].

CHANG, YC ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1324-1326

[8]

JOHNSON M, 1987, APPL PHYS LETT, V51, P1729

[9] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

[10] RESONANT TUNNELING OF TWO-DIMENSIONAL ELECTRONS THROUGH A QUANTUM WIRE - A NEGATIVE TRANSCONDUCTANCE DEVICE [J].

LURYI, S ;

CAPASSO, F .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1347-1349

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