PLASMONS, PHOTOLUMINESCENCE, AND BAND-GAP NARROWING IN VERY HEAVILY DOPED N-GAAS

被引：49

作者：

YAO, H ^{[1
]}

COMPAAN, A ^{[1
]}

机构：

[1] UNIV TOLEDO,DEPT PHYS & ASTRON,TOLEDO,OH 43606

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.103967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of extremely heavily doped n-GaAs are examined. Metastable electron concentrations up to 3.2×1019 cm -3 were produced by pulsed-laser annealing of Si-implanted GaAs. These very heavily doped layers give plasmon Raman shifts up to 1700 cm -1 and photoluminescence bandwidths of greater than 410 meV. The low-energy edge of the photoluminescence indicates a band-edge narrowing proportional to ∼n1/3 and equal to ∼200 meV at the highest electron concentration.

引用

页码：147 / 149

页数：3

共 29 条

[1]

ABSTREITER G, 1984, LIGHT SCATTERING SOL, P4

[2] MODELS FOR HEAVY DOPING EFFECTS IN GALLIUM-ARSENIDE [J].