PHOTO-LUMINESCENCE OF PULSED LASER IRRADIATED NORMAL-GAAS AND PARA-GAAS

被引：13

作者：

FELDMAN, BJ ^{[1
]}

LOWNDES, DH ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37830

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.92924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：59 / 61

页数：3

共 18 条

[1] RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT [J].

BIREY, H ;

SITES, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :619-634

[2]

Brett M. J., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P295

[3] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

CULLIS, AG ;

WEBBER, HC ;

BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[4]

Fletcher J., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P421

[5]

Lowndes D. H., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P223

[6] TIME-RESOLVED REFLECTIVITY DURING PULSED-LASER IRRADIATION OF GAAS [J].

LOWNDES, DH ;

WOOD, RF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :971-973

[7]

LOWNDES DH, 1981, 15TH P PHOT SPEC C K

[8] PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS [J].

LUM, WY ;

WIEDER, HH .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6187-6188

[9] LUMINESCENCE INVESTIGATIONS OF LASER-ANNEALED SI [J].

MIZUTA, M ;

SHENG, NH ;

MERZ, JL .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :453-455

[10]

Mooney P. M., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P255

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