LUMINESCENCE INVESTIGATIONS OF LASER-ANNEALED SI

被引：14

作者：

MIZUTA, M

SHENG, NH

MERZ, JL

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.92401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：453 / 455

页数：3

共 14 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J].

DEAN, PJ ;

FLOOD, WF ;

KAMINSKY, G .

PHYSICAL REVIEW, 1967, 163 (03) :721-&

[3] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[5]

Hess L. D., 1979, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V198, P31

[6]

KIRCZENOW G, 1977, CAN J PHYS, V55, P1788

[7] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[8] MEASUREMENT OF ELASTIC CONSTANTS AT LOW TEMPERATURES BY MEANS OF ULTRASONIC WAVES - DATA FOR SILICON AND GERMANIUM SINGLE CRYSTALS, AND FOR FUSED SILICA [J].

MCSKIMIN, HJ .

JOURNAL OF APPLIED PHYSICS, 1953, 24 (08) :988-997

[9] ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF CW LASER-ANNEALED SILICON [J].

MIZUTA, M ;

SHENG, NH ;

MERZ, JL ;

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :154-156

[10]

Pronko P.P., 1979, AIP C P, V50, P291, DOI DOI 10.1063/1.31671

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