PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 631 - +

[3] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &

[4] PHOTOLUMINESCENCE STUDY OF NATIVE DEFECTS IN ANNEALED GAAS [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (11) : 1421 - 1424

[5] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288

[6] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5347 - &

[7] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &

[8] THERMALLY CONVERTED SURFACE-LAYERS IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 213 - 215

[9] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 1 - 3

[10] MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053

[2] ANELASTICITY DUE TO INTRINSIC DEFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 631 - +

[3] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &

[4] PHOTOLUMINESCENCE STUDY OF NATIVE DEFECTS IN ANNEALED GAAS [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (11) : 1421 - 1424

[5] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J]. ELECTRONICS LETTERS, 1975, 11 (14) : 286 - 288

[6] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5347 - &

[7] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &

[8] THERMALLY CONVERTED SURFACE-LAYERS IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 213 - 215

[9] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 1 - 3

[10] MUNOZ E, 1970, APPL PHYS LETT, V16, P262, DOI 10.1063/1.1653188