EXTREME ACCUMULATION LAYERS ON ZNO SURFACES DUE TO HE+ IONS

被引：17

作者：

GOLDSTEIN, Y ^{[1
]}

MANY, A ^{[1
]}

EGER, D ^{[1
]}

GRINSHPAN, Y ^{[1
]}

YARON, G ^{[1
]}

NITZAN, M ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,RACH INST PHYS,JERUSALEM 91000,ISRAEL

来源：

PHYSICS LETTERS A | 1977年 / 62卷 / 01期

关键词：

D O I：

10.1016/0375-9601(77)90583-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：57 / 59

页数：3

共 12 条

[1]

EGER D, 1975, RCA REV, V36, P508

[2] QUANTUM PROPERTIES OF STRONG ACCUMULATION LAYERS ON ZNO SURFACES [J].

EGER, D ;

MANY, A ;

GOLDSTEIN, Y .

SURFACE SCIENCE, 1976, 58 (01) :18-24

[3] VERY STRONG ACCUMULATION LAYERS ON ZNO SURFACES [J].

EGER, D ;

MANY, A ;

GOLDSTEIN, Y .

PHYSICS LETTERS A, 1975, 55 (03) :197-198

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5]

GRINSHPAN Y, TO BE PUBLISHED

[6] POLAR SURFACES OF ZINC OXIDE CRYSTALS [J].

HEILAND, G ;

KUNSTMANN, P .

SURFACE SCIENCE, 1969, 13 (01) :72-+

[7]

KAGAN MS, 1974, SOV PHYS SEMICOND+, V8, P78

[8]

NITZAN M, TO BE PUBLISHED

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[10]

Stern F., 1974, Critical Reviews in Solid State Sciences, V4, P499

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