INJECTION INTO INSULATORS IN PRESENCE OF SPACE-CHARGE

被引:11
作者
SHATZKES, M [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL,FAC ELECT ENGN,HAIFA,ISRAEL
关键词
D O I
10.1063/1.325519
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4868 / 4872
页数:5
相关论文
共 6 条
[1]   CONTACT CURRENTS IN SILICON-NITRIDE [J].
ARNETT, PC ;
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2092-2097
[2]  
ODWYER JJ, 1973, THEORY ELECT CONDUCT, pCH3
[3]   FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
STRATTON, R .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&
[4]   PHOTOINJECTION STUDIES OF CHARGE DISTRIBUTIONS IN OXIDES OF MOS STRUCTURES [J].
POWELL, RJ ;
BERGLUND, CN .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4390-&
[5]   EFFECTS OF IMAGE FORCE AND TUNNELING ON CURRENT TRANSPORT IN METAL-SEMICONDUCTOR (SCHOTTKY-BARRIER) CONTACTS [J].
RIDEOUT, VL ;
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1970, 13 (07) :993-&
[6]  
Wang C G, 1975, CRC CRIT R SOLID ST, V5, P327, DOI [10.1080/10408437508243491, DOI 10.1080/10408437508243491]