DOMINANT FACTORS FOR FORMATION OF PEROVSKITE PBTIO3 FILMS USING EXCIMER-LASER ABLATION

被引：12

作者：

TANAKA, H ^{[1
]}

TABATA, H ^{[1
]}

KAWAI, T ^{[1
]}

KAWAI, S ^{[1
]}

机构：

[1] KAWASAKI HEAVY IND CO LTD,AKASHI TECH INST,AKASHI 673,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3B期

关键词：

PBTIO3; FILM; PEROVSKITE; PYROCHLORE; PBO FILM; EXCIMER LASER ABLATION;

D O I：

10.1143/JJAP.33.L451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric PbTiO3 films have been formed on SrTiO3(100) substrates using ArF excimer laser ablation as a function of substrate temperature with oxygen (O2+8%O3) pressure. Perovskite PbTiO3 is formed around the substrate temperature of 450-degrees-C and oxygen pressure of 10 approximately 40 mTorr. Pyrochlore Pb2Ti2O7-x {111}, on the other hand, is formed at higher temperature and lower oxygen pressure than the perovskite phase. The {100}-oriented pyrochlore is formed at lower temperature (around 400-degrees-C) and higher oxygen pressure. In addition, PbO films are obtained under similar formation conditions as those of the perovskite phase. This result suggests that PbO formation plays an important role in the construction of the PbTiO3 structure.

引用

页码：L451 / L454

页数：4

共 9 条

[1] BARIN I, THERMOCHEMICALL DATA
[2] DEPOSITION AND PHYSICAL CHARACTERIZATION OF THIN-FILMS OF LITHIUM-NIOBATE ON SILICON SUBSTRATES
BAUMANN, RC
ROST, TA
RABSON, TA
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) : 2989 - 2992
[3] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL
EVANS, JT
WOMACK, R
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) : 1171 - 1175
[4] EPITAXIAL-GROWTH OF LINBO3-LITAO3 THIN-FILMS ON AL2O3
KANATA, T
KOBAYASHI, Y
KUBOTA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) : 2989 - 2993
[5] FERROELECTRIC PROPERTIES OF LEAD-ZIRCONATE-TITANATE FILMS PREPARED BY LASER ABLATION
KIDOH, H
OGAWA, T
MORIMOTO, A
SHIMIZU, T
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (25) : 2910 - 2912
[6] PIEZOELECTRICITY OF C-AXIS ORIENTED PBTIO3 THIN-FILMS
KUSHIDA, K
TAKEUCHI, H
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1800 - 1801
[7] PREPARATION OF PBTIO3 THIN-FILMS BY SPUTTER ASSISTED PLASMA CHEMICAL VAPOR-DEPOSITION METHOD
MOCHIZUKI, S
KIMURA, S
MAKABE, R
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 : 15 - 17
[8] PREPARATION OF PBTIO3 FERROELECTRIC THIN-FILM BY RF SPUTTERING
OKUYAMA, M
MATSUI, Y
NAKANO, H
NAKAGAWA, T
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) : 1633 - 1634
[9] PREPARATION OF PBTIO3 THIN-FILMS AT LOW-TEMPERATURE BY AN EXCIMER LASER ABLATION TECHNIQUE
TABATA, H
KAWAI, T
KAWAI, S
MURATA, O
FUJIOKA, J
MINAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (19) : 2354 - 2356

← 1 →