A 1-GHZ/0.9-MW CMOS SIMOX DIVIDE-BY-128 129 DUAL-MODULUS PRESCALER USING A DIVIDE-BY-2/3 SYNCHRONOUS COUNTER

被引:20
作者
KADO, Y
SUZUKI, M
KOIKE, K
OMURA, Y
IZUMI, K
机构
[1] NTT LSI Laboratories, Atsugi 243-01
关键词
D O I
10.1109/4.210037
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an extremely low-power CMOS/SIMOX divide-by-128/129 dual-modulus prescaler. While operating at up to 1 GHz and dissipating merely 0.9 mW at a supply voltage of 1 V, it is capable of 2-GHz performance with dissipation of 7.2 mW at 2 V. This superior performance is primarily achieved by using an advanced ultrathin-film CMOS/SIMOX process technology combined with a new circuit configuration that uses a divide-by-2/3 synchronous counter. Using these same technologies, a single-chip CMOS PLL LSI that uses the developed prescaler is also fabricated. This CMOS PLL LSI can operate at up to 2 GHz while dissipating only 8.4 mW at a supply voltage of 2 V. Even at a lower supply voltage of 1.2 V, 1-GHz operation can be obtained with a corresponding power consumption of merely 1.4 mW. These results indicate that the high-speed and very-low-power features of CMOS/SIMOX technology could have an important impact on the development of future personal communication systems.
引用
收藏
页码:513 / 517
页数:5
相关论文
共 9 条
  • [1] BALESTRA F, 1988, 1987 P ESSDERC, P575
  • [2] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON
    IZUMI, K
    DOKEN, M
    ARIYOSHI, H
    [J]. ELECTRONICS LETTERS, 1978, 14 (18) : 593 - 594
  • [3] JAUSSAUD C, 1988, MATER RES SOC S P, V107, P17
  • [4] ULTRA-FAST (0.5-MU-M) CMOS CIRCUITS IN FULLY DEPLETED SOI FILMS
    KAMGAR, A
    HILLENIUS, SJ
    CONG, HIL
    FIELD, RL
    LINDENBERGER, WS
    CELLER, GK
    TRIMBLE, LE
    SHENG, TT
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) : 640 - 647
  • [5] MAEMURA K, 1987 IEEE GAAS IC S, P273
  • [6] MIZUNO M, 1992, IEEE INT SOL STAT CI, P90
  • [7] PRACTICAL REDUCTION OF DISLOCATION DENSITY IN SIMOX WAFERS
    NAKASHIMA, S
    IZUMI, K
    [J]. ELECTRONICS LETTERS, 1990, 26 (20) : 1647 - 1649
  • [8] Omura Y., 1991, International Electron Devices Meeting 1991. Technical Digest (Cat. No.91CH3075-9), P675, DOI 10.1109/IEDM.1991.235332
  • [9] SAITO S, 1988, IEICE ICD8869 TECH R, P43