THERMAL DOUBLE DONORS IN SILICON

被引：210

作者：

WAGNER, P

HAGE, J

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 02期

关键词：

D O I：

10.1007/BF00616290

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：123 / 138

页数：16

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