PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING

[1] BASS SJ, 1968, CRYSTAL GROWTH, V3, P286

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[3] EFFECT OF IMPURITY-CORE ON CARRIER MOBILITY IN HEAVILY DOPED GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) : 1865 - &

[4] ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN P-TYPE GAP [J]. APPLIED PHYSICS LETTERS, 1969, 14 (01) : 25 - &

[5] HACKETT WH, 1970, J ELECTROCHEM SOC, V117, pC94

[6] HACKETT WH, PRIVATE COMMUNICATIO

[7] ELECTRICAL PROPERTIES OF SULFUR-DOPED GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 285 - &

[8] Jessop H. T., 1960, PHOTOELASTICITY PRIN

[9] KIM CK, 1969, RADIOCHEM RADIOANAL, V2, P53

[10] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 131 - &

[1] BASS SJ, 1968, CRYSTAL GROWTH, V3, P286

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[3] EFFECT OF IMPURITY-CORE ON CARRIER MOBILITY IN HEAVILY DOPED GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) : 1865 - &

[4] ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN P-TYPE GAP [J]. APPLIED PHYSICS LETTERS, 1969, 14 (01) : 25 - &

[5] HACKETT WH, 1970, J ELECTROCHEM SOC, V117, pC94

[6] HACKETT WH, PRIVATE COMMUNICATIO

[7] ELECTRICAL PROPERTIES OF SULFUR-DOPED GALLIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 285 - &

[8] Jessop H. T., 1960, PHOTOELASTICITY PRIN

[9] KIM CK, 1969, RADIOCHEM RADIOANAL, V2, P53

[10] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 131 - &