FREQUENCY-RESPONSE OF SUBMICROMETER PSEUDOMORPHIC ALGAAS INGAAS GAAS MODFETS AT CRYOGENIC TEMPERATURES

被引：4

作者：

LASKAR, J ^{[1
]}

KOLODZEY, J ^{[1
]}

KETTERSON, A ^{[1
]}

CARACCI, S ^{[1
]}

ADESIDA, I ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

CRYOGENICS | 1990年 / 30卷 / 12期

基金：

美国国家科学基金会;

关键词：

TRANSISTORS; ELECTRICAL PROPERTIES; FREQUENCY CHARACTERISTICS;

D O I：

10.1016/0011-2275(90)90221-W

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35-mu-m at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, F(T), increasing by 80% for gate length L(g) = 1.73-mu-m and 15% for L(g) = 0.35-mu-m. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

引用

页码：1134 / 1139

页数：6

共 23 条

[1] RF MEASUREMENTS AND CHARACTERIZATION OF HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS AT LOW-TEMPERATURES [J].