GROWTH OF GA1-XINXAS/GAAS1-YPY MULTIPLE QUANTUM-WELL STRUCTURES BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：4

作者：

CUNNINGHAM, JE

GOOSSEN, K

WILLIAMS, M

JAN, W

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We examine growth of Ga1-xInxAs/GaAs1-yPy multiple quantum well structures by gas source molecular beam epitaxy for photonic switching applications at 1.06-mu-m. For appropriate x and y values these structures can be grown pseudomorphically at the GaAs lattice constant. Such structures show good morphology, room-temperature photoluminescence and sharp excitonic absorption edges near 1.06-mu-m.

引用

页码：949 / 952

页数：4

共 9 条

[1]

CHANG KH, 1990, MATER RES SOC SYMP P, V160, P129

[2] GAAS-ALAS LOW-VOLTAGE REFRACTIVE MODULATOR OPERATING AT 1.06 MU-M [J].