EFFECT OF COMPOSITION AND ANNEALING CONDITIONS ON THE ELECTRICAL-PROPERTIES OF PB(ZRXTI1-X)O3 THIN-FILMS DEPOSITED BY THE SOL-GEL PROCESS

被引：28

作者：

ALSHAREEF, HN ^{[1
]}

BELLUR, KR ^{[1
]}

AUCIELLO, O ^{[1
]}

CHEN, X ^{[1
]}

KINGON, AI ^{[1
]}

机构：

[1] MCNC,DIV ELECTR TECHNOL,RES TRIANGLE PK,NC 27709

来源：

THIN SOLID FILMS | 1994年 / 252卷 / 01期

关键词：

Dielectric properties; Dielectrics;

D O I：

10.1016/0040-6090(94)90822-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of annealing temperature, Zr/Ti ratio and film lead content on the dielectric and ferroelectric properties of Pb(ZrxTi1-x)O3 Pt-based thin film capacitors (Pt/PZT/Pt/Ti/SiO2/Si) were investigated. The PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650-degrees-C is required to obtain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasing Zr content. However, as the number of switching cycles increased passed 10(7)-10(8) cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal. Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti ratio and annealing temperature. The small signal dielectric constant showed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.

引用

页码：38 / 43

页数：6

共 21 条

[1]

Al-Shareef H. N., 1994, Ferroelectrics, V152, P85, DOI 10.1080/00150199408017601

[2]

ALSHAREEF HN, IN PRESS INTEGRATED

[3]

BELLUR KR, 1992, ISAF 92 : PROCEEDINGS OF THE EIGHTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, P448, DOI 10.1109/ISAF.1992.300595

[4] FATIGUE OF FERROELECTRIC PBZRXTIYO3 CAPACITORS WITH RU AND RUOX ELECTRODES [J].