DOSE DEPENDENCE IN LASER ANNEALING OF ARSENICIMPLANTED SILICON

被引：19

作者：

VENKATESAN, TNC

GOLOVCHENKO, JA

POATE, JM

COWAN, P

CELLER, GK

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.90411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：429 / 431

页数：3

共 12 条

[1]

ANTONENKO AK, 1976, SOV PHYS SEMICOND, V10, P265

[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[3]

DVURECHENSKY AV, 1977, 1ST USSR US SEM ION

[4] INVESTIGATION OF LASER-INDUCED DIFFUSION AND ANNEALING PROCESSES OF ARSENIC-IMPLANTED SILICON-CRYSTALS [J].

GEILER, HD ;

GOTZ, G ;

KLINGE, KD ;

TRIEM, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (02) :K171-K173

[5] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J].

GOLOVCHENKO, JA ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :147-149

[6]

KHAIBULLIN IB, 1977, 1ST USSR US SEM ION

[7]

KRNICKI J, 1977, PHYS LETT A, V61, P181

[8]

KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[9] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].

LEAMY, HJ ;

ROZGONYI, GA ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :535-537

[10]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

← 1 2 →