TERAHERTZ RADIATION FROM LARGE APERTURE SI P-I-N-DIODES

被引：40

作者：

XU, L

ZHANG, XC

AUSTON, DH

JALALI, B

机构：

[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subpicosecond electromagnetic pulses having THz bandwidths have been generated from large aperture Si p-i-n diodes under different biases by illumination with fs-optical pulses. The amplitude and spectral bandwidth of the radiated pulses increases with the reverse bias on the p-i-n diode. This effect can be explained by the electric field dependence of the transient drift velocity of the photo-generated carriers in the intrinsic region of the p-i-n diode.

引用

页码：3357 / 3359

页数：3

共 8 条

[1] PICOSECOND PHOTOCONDUCTING HERTZIAN DIPOLES [J].