INTERNAL-FRICTION DUE TO KINK MOTION AND KINK PAIR FORMATION IN INTRINSIC AND N-DOPED GERMANIUM

被引:21
作者
JENDRICH, U [1 ]
HAASEN, P [1 ]
机构
[1] SONDERFORSCH BEREICH 126,GOTTINGEN,FED REP GER
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 108卷 / 02期
关键词
Activation Enthalpy - High Temperature Properties - Low Temperature Properties;
D O I
10.1002/pssa.2211080210
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Measurements of the internal friction on deformed Ge at frequencies from 0.2 to 20 Hz at temperatures between 150 and 820 K show two maxima α and β, occurring after deformation only. Their activation enthalpy H, prefactor f0, and relaxation strength Δ are: Hα = (1.108 ± 0.01) eV, f0α = (0.14 to 15) × 109 s-1 (increasing with increasing deformation), Δα 10-2; Hβ = (2.07 ± 0.2) eV, f0β 1013 s-1, Δβ 3 × 10-2. Both shift to lower temperatures with increasing deformation. They are attributed to the movement of geometrical kinks (α) and to kink pair formation (β) on single partial dislocations. Doping with (2 to 4) × 1017 cm-3 Sb lowers the kink migration enthalpy Hα by 0.3 to 0.4 eV. This indicates that the lowering of the activation enthalpy of the dislocation velocity by doping is due to that of the kink migration enthalpy Hα only.
引用
收藏
页码:553 / 568
页数:16
相关论文
共 47 条
[21]  
HIRTH JP, 1968, THEORY DISLOCATIONS, P484
[22]  
JENDRICH U, 1983, THESIS GOTTINGEN
[23]  
JENDRICH U, 1988, THESIS GOTTINGEN
[24]   THEORIES OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J].
JONES, R .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :61-67
[25]   THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION [J].
JONES, R .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02) :213-219
[26]   INTERNAL FRICTION AND DEFECT INTERACTION IN GERMANIUM - EXPERIMENTAL [J].
KESSLER, JO .
PHYSICAL REVIEW, 1957, 106 (04) :646-653
[27]  
Kojima K., 1971, Crystal Lattice Defects, V2, P147
[28]  
KOJIMA KI, 1971, CRYSTAL LATTICE DEFE, V2, P159
[29]   BERECHNUNG DES PEIERLSPOTENTIALS IM DIAMANTGITTER [J].
LABUSCH, R .
PHYSICA STATUS SOLIDI, 1965, 10 (02) :645-&
[30]  
LOUCHET F, 1981, I PHYS C SER, V60, P35