ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS SI1-XGEX THIN-FILMS

被引：2

作者：

PISARKIEWICZ, T

STAPINSKI, T

KOLODZIEJ, A

机构：

来源：

ACTA PHYSICA POLONICA A | 1991年 / 79卷 / 2-3期

关键词：

D O I：

10.12693/APhysPolA.79.203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H2 gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism.

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页码：203 / 206

页数：4

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