ANALYSIS OF THIN-FILM SILICON-ON-INSULATOR STRUCTURES FORMED BY LOW-ENERGY OXYGEN ION-IMPLANTATION

被引：29

作者：

LI, Y

KILNER, JA

ROBINSON, AK

HEMMENT, PLF

MARSH, CD

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of the formation and growth of buried oxide layers, formed by oxygen implantation into silicon at lower energies (50-140-keV O-16+), have been studied using secondary-ion mass spectrometry. Some results have been checked and compared with the results obtained by Rutherford backscattering and cross-sectional transmission electron microscopy. The critical doses, required to form a continuous buried stoichiometric oxide layer during implantation (PHI-c(I)) and after annealing (PHI-c(A)) have been estimated from experimental results. The thicknesses of the silicon overlayer (T(Si)A) and buried silicon dioxide layer (T(SiO2)A) for the annealed wafers have also been estimated. A set of semi-empirical formulas for PHI-c(I), PHI-c(A), T(Si)A, and T(SiO2)A has been introduced. These formulas can be used to quickly calculate the critical doses and the layer thickness values.

引用

页码：3605 / 3612

页数：8

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