A SIMS AND TEM ANALYSIS OF THE GROWTH MECHANISMS OF ANNEALED BURIED SIO2 LAYERS FORMED BY INCREMENTAL HIGH-DOSE OXYGEN ION-IMPLANTATION INTO SILICON AT 150 KEV

被引：7

作者：

GRIFFIN, CJ

KILNER, JA

CHATER, RJ

STATONBEVAN, A

REESON, KJ

HEMMENT, PLF

DAVIS, JR

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90774-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：215 / 219

页数：5

共 11 条

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[10] MECHANISMS OF BURIED OXIDE FORMATION BY ION-IMPLANTATION [J].

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