ENERGY AND DOSE DEPENDENCE OF SILICON TOP LAYER AND BURIED OXIDE LAYER THICKNESSES IN SIMOX SUBSTRATES

被引：8

作者：

BUSSMANN, U

ROBINSON, AK

HEMMENT, PLF

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96292-S

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The formation of SIMOX (separation by implanted oxygen) substrates involves the implantation of very high doses of oxygen into silicon. A model has been developed to predict the evolution of the oxygen depth profile taking into account sputtering, swelling and oxygen redistribution during implantation as well as chemical segregation during high temperature annealing. The resulting computer code IRIS (implantation of reactive ions into silicon) enables a fast calculation of oxygen profiles to be made. The simulation results discussed in this paper cover the energy range 50-300 keV and doses of up to 2.5 x 10(18) O+ cm-2.

引用

页码：852 / 855

页数：4

共 13 条

[1] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].