LAYER THICKNESS CALCULATIONS FOR SILICON-ON-INSULATOR STRUCTURES FORMED BY OXYGEN IMPLANTATION

被引：12

作者：

BUSSMANN, U

HEMMENT, PLF

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.104227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new computer program enables the evolution of oxygen distributions in separation by implanted oxygen (SIMOX) substrates to be simulated during implantation and also after high-temperature annealing. The positions of the Si/SiO2 interfaces have been calculated for implantation energies of 150 and 200 keV. Theoretical results are in good agreement with experimental data over a wide range of fluences. It is found that the use of multiple implantation and annealing cycles, in comparison with a single implantation stage, shifts the buried oxide layer towards the surface.

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页码：1200 / 1202

页数：3

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