EQUILIBRIUM TEMPERATURE IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION

被引：10

作者：

VIGNOLI, S

MEAUDRE, R

MEAUDRE, M

机构：

[1] Département de Physique des Matériaux, Université Claude Bernard Lyon I, 69622 Villeurbanne Cédex

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.50.7378

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of illumination on the thermal equilibrium temperature of the defect structure in undoped a-Si:H has been studied by measurements of the defect density versus temperature up to 290 degrees C. It was found that the light-induced excess carrier concentration leads to a decrease of the thermal equilibrium temperature depending on the carrier generation rate. This behavior is consistent qualitatively as well as quantitatively with a phenomenological model recently developed over a wide range of carrier generation rates.

引用

页码：7378 / 7383

页数：6

共 30 条

[1] BENATAR LE, 1991, MATER RES SOC SYMP P, V219, P117, DOI 10.1557/PROC-219-117
[2] A FULLY AUTOMATED HOT-WALL MULTIPLASMA-MONOCHAMBER REACTOR FOR THIN-FILM DEPOSITION
CABARROCAS, PRI
CHEVRIER, JB
HUC, J
LLORET, A
PAREY, JY
SCHMITT, JPM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04): : 2331 - 2341
[3] KINETICS OF LIGHT-INDUCED DEGRADATION IN A-SI-H SOLAR-CELLS
CHEN, LF
YANG, L
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 1185 - 1188
[4] KINETICS OF RECOVERY OF THE LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION
GLESKOVA, H
MORIN, PA
WAGNER, S
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2063 - 2065
[5] LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
GRAEFF, CFO
BUHLEIER, R
STUTZMANN, M
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (23) : 3001 - 3003
[6] DEPENDENCE OF STEADY-STATE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON ON CARRIER GENERATION RATE STUDIED OVER A WIDE-RANGE
HATA, N
GANGULY, G
MATSUDA, A
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (15) : 1791 - 1793
[7] HOU J, 1993, 11TH P PSEC MONTR 19
[8] DEPENDENCE OF THE SATURATION OF LIGHT-INDUCED DEFECT DENSITY IN A-SI-H ON TEMPERATURE AND LIGHT-INTENSITY
ISOMURA, M
HATA, N
WAGNER, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11): : 3500 - 3505
[9] ISOMURA M, 1992, MATER RES SOC S P, V258, P473
[10] EQUILIBRIUM TEMPERATURE AND RELATED DEFECTS IN INTRINSIC GLOW-DISCHARGE AMORPHOUS-SILICON
MCMAHON, TJ
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 412 - 414

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