MAGNETIC-FIELD DEPENDENCE OF SPUTTERING MAGNETRON EFFICIENCY

被引:28
作者
GOREE, J
SHERIDAN, TE
机构
关键词
D O I
10.1063/1.106342
中图分类号
O59 [应用物理学];
学科分类号
摘要
A Monte Carlo simulation of electron transport is used to predict the dependence of the ionization efficiency on the magnetic field strength of a planar magnetron. This offers insight into the operation of the magnetron, and it also provides two valuable practical results. First, the efficiency increases with field strength only up to a saturation level. Operating a magnetron with a stronger field strength would only lead to an undesirable loss of target utilization. Second, a scaling law is found that is useful for designing magnetrons of different sizes.
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页码:1052 / 1054
页数:3
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