STRUCTURAL MODEL OF SPUTTERED FLUORINATED AMORPHOUS-SILICON

被引：20

作者：

MATSUMURA, H

SAKAI, K

KAWAKYU, Y

FURUKAWA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5537 / 5542

页数：6

共 16 条

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[7] CONDUCTIVITY AND P-N-TYPE CONTROL OF FLUORINATED AMORPHOUS-SILICON (A-SI-F) WITHOUT INCORPORATING HYDROGEN [J].

MATSUMURA, H ;

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[8] A HEAT-RESISTING NEW AMORPHOUS-SILICON [J].

MATSUMURA, H ;

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[9]

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[10]

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