ANNEALING CHARACTERISTICS OF ION-IMPLANTED P-CHANNEL MOS-TRANSISTORS

[1] BIERHENKE H, 1972, 5 P INT MICR C MUN

[2] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &

[3] DILL HG, 1971, 2 P INT C ION IMPL S, P315

[4] EDWARDS JR, 1973, IEEE T ELECTRON DEVI, VED20, P283

[5] GROVE AS, 1967, PHYS TECHNOL S, P305

[6] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P282

[7] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1237 - +

[8] THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 404 - 405

[9] SURFACE DEPLETION REGION WIDTH DEPENDENCE OF THRESHOLD VOLTAGE SHIFT OF ION-IMPLANTED MOS-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 501 - 503

[10] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 621 - 626

[1] BIERHENKE H, 1972, 5 P INT MICR C MUN

[2] COMPLEMENTARY MOS 1.2 VOLT WATCH CIRCUIT USING ION IMPLANTATION [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 165 - &

[3] DILL HG, 1971, 2 P INT C ION IMPL S, P315

[4] EDWARDS JR, 1973, IEEE T ELECTRON DEVI, VED20, P283

[5] GROVE AS, 1967, PHYS TECHNOL S, P305

[6] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P282

[7] CHARACTERISTICS OF P-CHANNEL MOS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1237 - +

[8] THRESHOLD VOLTAGE AND GAIN TERM BETA OF ION-IMPLANTED ENHANCEMENT-MODE N-CHANNEL MOS-TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 404 - 405

[9] SURFACE DEPLETION REGION WIDTH DEPENDENCE OF THRESHOLD VOLTAGE SHIFT OF ION-IMPLANTED MOS-TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 501 - 503

[10] ELECTRICAL CHARACTERISTICS OF BORON-IMPLANTED N-CHANNEL MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (06) : 621 - 626