SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC

[51] Tairov Y. M., 1977, Electroluminescence, P31, DOI 10.1007/3540081275_2

[52] SHAPES OF PAIR EMISSION BANDS IN GAP-GE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) : 812 - 818

[53] TAKUNOV LV, 1976, SOV PHYS SEMICOND+, V10, P1302

[54] TOYOZAWA T, 1967, DYNAMIC PROCESSES SO, P110

[55] ON ELECTRONIC CONDUCTION OF ALPHA-SIC CRYSTALS BETWEEN 300 AND 1500 DEGREES K [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) : 109 - +

[56] SILICON-CARBIDE DOPED WITH GALLIUM [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01): : 37 - 42

[57] LUMINESCENCE OF ALUMINIUM CENTRE IN CUBIC SIC - DEPENDENCE OF RECOMBINATION RATES ON INTENSITY OF LIGHT EXCITATION [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) : 1727 - &

[51] Tairov Y. M., 1977, Electroluminescence, P31, DOI 10.1007/3540081275_2

[52] SHAPES OF PAIR EMISSION BANDS IN GAP-GE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (05) : 812 - 818

[53] TAKUNOV LV, 1976, SOV PHYS SEMICOND+, V10, P1302

[54] TOYOZAWA T, 1967, DYNAMIC PROCESSES SO, P110

[55] ON ELECTRONIC CONDUCTION OF ALPHA-SIC CRYSTALS BETWEEN 300 AND 1500 DEGREES K [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) : 109 - +

[56] SILICON-CARBIDE DOPED WITH GALLIUM [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (01): : 37 - 42

[57] LUMINESCENCE OF ALUMINIUM CENTRE IN CUBIC SIC - DEPENDENCE OF RECOMBINATION RATES ON INTENSITY OF LIGHT EXCITATION [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (10) : 1727 - &