ON ORIGIN OF HIGH PHOTOVOLTAGES IN SEMICONDUCTORS

被引：20

作者：

ZHADKO, IP

ROMANOV, VA

机构：

[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr

来源：

PHYSICA STATUS SOLIDI | 1968年 / 28卷 / 02期

关键词：

D O I：

10.1002/pssb.19680280239

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new possible mechanism is proposed for explaining the high photovoltage arising in semiconductor films assuming an anisotropic conductivity of the photosensitive crystallites of which the films consist. In this case the high photovoltage is the sum of the elementary transverse Dember photo‐e.m.f.'s. This model may explain practically all peculiarities of the high‐photovoltage effects. Copyright © 1968 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：797 / +

页数：1

共 36 条

[31] RECENT DEVELOPMENTS IN SEMICONDUCTOR PIEZORESISTIVE DEVICES [J].