THE USE OF BEAM SHAPING TO ACHIEVE LARGE-GRAIN CW LASER-RECRYSTALLIZED POLYSILICON ON AMORPHOUS SUBSTRATES

被引：57

作者：

STULTZ, TJ ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.92773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：498 / 500

页数：3

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GERZBERG, L
GIBBONS, JF
MAGEE, TJ
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HONG, JD
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778
[2] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74
[3] LASER FABRICATION OF LARGE-AREA ARRAYS - THIN-FILM SILICON ISOLATED DEVICES ON FUSED SILICA SUBSTRATES
LAFF, RA
HUTCHINS, GL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 743 - 743
[4] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE
LAM, HW
TASCH, AF
HOLLOWAY, TC
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208
[5] DISLOCATION ETCH FOR (100) PLANES IN SILICON
SECCODARAGONA, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) : 948 - +
[6] RESISTIVITY CHANGES IN LASER-ANNEALED POLYCRYSTALLINE SILICON DURING THERMAL ANNEALING
SHIBATA, T
IIZUKA, H
KOHYAMA, S
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 21 - 23