THERMAL-STABILITY OF MO/SI MULTILAYER SOFT-X-RAY MIRRORS FABRICATED BY ELECTRON-BEAM EVAPORATION

被引:25
作者
STOCK, HJ [1 ]
KLEINEBERG, U [1 ]
HEIDEMANN, B [1 ]
HILGERS, K [1 ]
KLOIDT, A [1 ]
SCHMIEDESKAMP, B [1 ]
HEINZMANN, U [1 ]
KRUMREY, M [1 ]
MULLER, P [1 ]
SCHOLZE, F [1 ]
机构
[1] PHYS TECH BUNDESANSTALT,INST BERLIN,D-10587 BERLIN,GERMANY
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 04期
关键词
68.55; 68.65; 78.65;
D O I
10.1007/BF00323612
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mo/Si multilayers are fabricated by electron-beam evaporation in UHV at different temperatures (30-degrees-C, 150-degrees-C, 200-degrees-C) during deposition. After completion their thermal stability is tested by baking them at temperatures (T(bak)) between 200-degrees-C and 800-degrees-C in steps of 50-degrees-C or 100-degrees-C. After each baking step the multilayers are characterized by small angle Cu(Kalpha)-X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500-degrees-C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150-degrees-C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200-degrees-C stands even a 20 min 500-degrees-C baking without considerable changes in the reflectivity behaviour.
引用
收藏
页码:371 / 376
页数:6
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