SURFACE SEGREGATION EFFECTS OF IN IN GAAS

被引：14

作者：

DOSANJH, SS ^{[1
]}

ZHANG, XM ^{[1
]}

SANSOM, D ^{[1
]}

HARRIS, JJ ^{[1
]}

FAHY, MR ^{[1
]}

JOYCE, BA ^{[1
]}

CLEGG, JB ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.354686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL), secondary-ion mass spectroscopy (SIMS), and cross-sectional transmission electron microscopy (TEM) measurements have been performed to assess surface segregation of In in GaAs during molecular-beam epitaxial growth of InAs monolayers between GaAs layers. The InAs growth temperature at which In segregation is detectable depends on the characterization technique used; using PL it is above 420-degrees-C, but from TEM and SIMS it is 420 and 340-degrees-C, respectively. These results highlight the need for complementary information to provide a better understanding of the segregation phenomenon. SIMS data show that the total amount of In segregating and the extent of its distribution both increase with InAs deposition temperature.

引用

页码：2481 / 2485

页数：5

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