ADVANCED ELECTRON-BEAM LITHOGRAPHY - SOFTWARE SYSTEM AMDES

被引：5

作者：

SUGIYAMA, N

SAITOH, K

SHIMIZU, K

TARUI, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1466 / 1474

页数：9

共 10 条

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[2] MONTE-CARLO SIMULATION OF SPATIALLY DISTRIBUTED BEAMS IN ELECTRON-BEAM LITHOGRAPHY [J].

KYSER, DF ;

VISWANATHAN, NS .

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[3]

OTSUKA H, 1979, FAL P ECS M, P1360

[4] SELF-CONSISTENT PROXIMITY EFFECT CORRECTION TECHNIQUE FOR RESIST EXPOSURE (SPECTER) [J].

PARIKH, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :931-933

[5] DATA-PROCESSING SYSTEM OF ELECTRON-BEAM LITHOGRAPHY FOR VLSI MICROFABRICATION [J].

SUGIYAMA, N ;

KAWAJI, A ;

TARUI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :675-685

[6] ELECTRON-BEAM EXPOSURE SYSTEM AMDES [J].

SUGIYAMA, N ;

SAITOH, K .

COMPUTER-AIDED DESIGN, 1979, 11 (02) :59-65

[7]

SUGIYAMA N, 1978, P S ELECTRON ION BEA, V78, P184

[8]

SUGIYAMA N, 1979, ISSCC DIG TECH PAPER, P88

[9]

WITTLES ND, 1978, P S ELECTRON ION BEA, V78, P361

[10] PROCESS-INDUCED DISTORTION IN SILICON WAFERS [J].

YAU, LD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1299-1305

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