STUDIES OF LARGE-SCALE UNSTABLE GROWTH FORMED DURING GAAS(001) HOMOEPITAXY

被引：44

作者：

ORME, C

JOHNSON, MD

LEUNG, KT

ORR, BG

SMILAUER, P

VVEDENSKY, D

机构：

[1] UNIV MICHIGAN,HARRISON M RANDALL LAB PHYS,ANN ARBOR,MI 48109

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80194-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic force and scanning tunneling microscopy studies have been performed on GaAs(001) films grown by molecular beam epitaxy. Multilayered mounds are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased, these features grow in all dimensions but the angle of inclination remains approximately constant at 1 degrees. The mounding does not occur on surfaces grown in step-flow. We propose that the multi-layered features are due to an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.

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页码：128 / 135

页数：8

相关论文

共 11 条

[1] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS [J].

BRIONES, F ;

GOLMAYO, D ;

GONZALEZ, L ;

DEMIGUEL, JL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L478-L480

[2] KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP [J].

COTTA, MA ;

HAMM, RA ;

STALEY, TW ;

CHU, SNG ;

HARRIOTT, LR ;

PANISH, MB ;

TEMKIN, H .

PHYSICAL REVIEW LETTERS, 1993, 70 (26) :4106-4109

[3] REAL-TIME OBSERVATION OF GAAS (001) SURFACES DURING MOLECULAR-BEAM EPITAXY BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

ISU, T ;

WATANABE, A ;

HATA, M ;

KATAYAMA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2259-L2261

[4]

JOHNSON MD, 1994, PHYS REV LETT, V72, P1

[5] A COMBINED MOLECULAR-BEAM EPITAXY AND SCANNING TUNNELING MICROSCOPY SYSTEM [J].

ORR, BG ;

SNYDER, CW ;

JOHNSON, M .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (06) :1400-1403

[6] STEP MOTION ON CRYSTAL SURFACES [J].

SCHWOEBEL, RL ;

SHIPSEY, EJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3682-+

[7] STEP-DENSITY VARIATIONS AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING EPITAXIAL-GROWTH ON VICINAL GAAS(001) [J].

SHITARA, T ;

VVEDENSKY, DD ;

WILBY, MR ;

ZHANG, J ;

NEAVE, JH ;

JOYCE, BA .

PHYSICAL REVIEW B, 1992, 46 (11) :6815-6824

[8] STEP-EDGE BARRIERS ON GAAS(001) [J].

SMILAUER, P ;

VVEDENSKY, DD .

PHYSICAL REVIEW B, 1993, 48 (23) :17603-17606

[9]

SMILAUER P, UNPUB

[10] REAL-TIME LASER-LIGHT SCATTERING STUDIES OF SURFACE-TOPOGRAPHY DEVELOPMENT DURING GAAS MBE GROWTH [J].

SMITH, GW ;

PIDDUCK, AJ ;

WHITEHOUSE, CR ;

GLASPER, JL ;

SPOWART, J .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :966-971