LIQUID-PHASE EPITAXIAL-GROWTH OF GA1-XINXSB ON GASB BY STEPWISE GRADING

被引：6

作者：

RODE, JR

GERTNER, ER

ANDREWS, AM

CHEUNG, DT

TENNANT, WE

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 02期

关键词：

D O I：

10.1007/BF02655681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：337 / 345

页数：9

共 11 条

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[5] IN-GA-SB TERNARY PHASE DIAGRAM [J].

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[8] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

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[9] GUNN EFFECT AND CONDUCTION BAND STRUCTURE IN GAXIN1-SB ALLOYS [J].

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