PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING IN AU-GE-DOPED GA1-XALXAS P-N DIODES

[1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1016

[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843

[3] ANDREWS A, TO BE PUBLISHED

[4] TUNNEL MECHANISMS AND JUNCTION CHARACTERIZATION IN III-V TUNNEL-DIODES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (06): : 2273 - +

[5] STUDY OF TUNNEL EFFECT ASSISTED BY IMPURITIES IN GAAS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1970, 5 (06): : 906 - &

[6] DUKE CB, 1970, 10 P INT C PHYS SEM, P856

[7] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &

[8] DEFECT AND PHONON EFFECTS IN IN1-XGAXP P-N TUNNEL JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (17) : 1531 - +

[9] MEASUREMENT SYSTEM FOR DERIVATIVE STUDIES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (01) : 90 - &

[1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1016

[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843

[3] ANDREWS A, TO BE PUBLISHED

[4] TUNNEL MECHANISMS AND JUNCTION CHARACTERIZATION IN III-V TUNNEL-DIODES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (06): : 2273 - +

[5] STUDY OF TUNNEL EFFECT ASSISTED BY IMPURITIES IN GAAS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1970, 5 (06): : 906 - &

[6] DUKE CB, 1970, 10 P INT C PHYS SEM, P856

[7] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &

[8] DEFECT AND PHONON EFFECTS IN IN1-XGAXP P-N TUNNEL JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1971, 9 (17) : 1531 - +

[9] MEASUREMENT SYSTEM FOR DERIVATIVE STUDIES [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (01) : 90 - &