CHARACTERIZATION AND ANALYSIS OF DETECTOR MATERIALS AND PROCESSES

被引:9
作者
EICHINGER, P
机构
关键词
D O I
10.1016/0168-9002(87)90512-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:313 / 318
页数:6
相关论文
共 15 条
[11]  
RATH H, UNPUB
[12]  
RIOTTE HG, 1980, RADIOCHIM ACTA, V27, P209
[13]   SURFACE-MICRO-DEFECT AND INNER-MICRO-DEFECT IN ANNEALED SILICON-WAFER CONTAINING OXYGEN [J].
SHIMURA, F ;
TSUYA, H ;
KAWAMURA, T .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :269-273
[14]   EMPIRICAL MODELING OF LOW-ENERGY BORON IMPLANTS IN SILICON [J].
SIMARDNORMANDIN, M ;
SLABY, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2218-2223
[15]  
STAPPER CH, 1983, P IEEE INT SOLID STA, P12