EFFECTIVE REMOVAL OF OXYGEN FROM SI LAYER ON BURIED OXIDE BY IMPLANTATION OF HYDROGEN

被引：4

作者：

MIZUNO, B

KUBOTA, M

NOMURA, N

IWASAKI, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2566 / 2568

页数：3

共 17 条

[1]

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[3]

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[4]

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[8] ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION [J].

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[9]

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[10] COMPARISON OF BURIED OXIDE IN SILICON BY OXYGEN IMPLANTATION MADE BY WAFER AND BEAM SCANNING [J].

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MCCONNELL, MD .

APPLIED PHYSICS LETTERS, 1986, 48 (13) :858-860

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