A SIMPLE TECHNIQUE FOR DETERMINING THE INTERFACE-TRAP DISTRIBUTION OF SUB-MICRON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY THE CHARGE PUMPING METHOD

被引：15

作者：

HOFMANN, F

KRAUTSCHNEIDER, WH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

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D O I：

10.1063/1.343034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1358 / 1360

页数：3

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