ELECTRON MOBILITY IN COMPENSATED SEMICONDUCTORS AT LOW TEMPERATURES

被引：2

作者：

KAR, RK

MUKHERJEE, MN

机构：

来源：

ZEITSCHRIFT FUR PHYSIK | 1970年 / 237卷 / 01期

关键词：

D O I：

10.1007/BF01400472

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：16 / +

页数：1

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[5] MOBILITY OF ELECTRONS IN COMPENSATED SEMICONDUCTORS .2. THEORY [J].

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[6]

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[8] DIPOLE SCATTERING FROM ION PAIRS IN COMPENSATED SEMICONDUCTORS [J].

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[9]

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[10]

TSERTSVADZE AA, 1968, SOV PHYS SEMICOND+, V1, P1505